? semiconductor components industries, llc, 2004 june, 2004 ? rev. 0 publication order number: bc808?25lt1/d 1 BC808-25LT1, bc808-40lt1 general purpose transistors pnp silicon features ? pb?free packages may be available maximum ratings rating symbol value unit collector - emitter voltage v ceo ?25 v collector - base voltage v cbo ?30 v emitter - base voltage v ebo ?5.0 v collector current ? continuous i c ?500 madc maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. thermal characteristics characteristic symbol max unit total device dissipation fr? 5 board, (note 1) t a = 25 c derate above 25 c p d 225 1.8 mw mw/ c thermal resistance, junction?to?ambient r ja 556 c/w total device dissipation alumina substrate, (note 2) t a = 25 c derate above 25 c p d 300 2.4 mw mw/ c thermal resistance, junction?to?ambient r ja 417 c/w junction and storage temperature t j , t stg ?55 to +150 c 1. fr?5 = 1.0 x 0.75 x 0.062 in. 2. alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina. sot?23 case 318 style 6 marking diagram 3 12 5xd 1 2 3 http://onsemi.com x = f = bc808?25lt1 = g = bc808?40lt1 d = date code collector 3 1 base 2 emitter see detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. ordering information
bc808?25lt1, bc808?40lt1 http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted.) characteristic symbol min typ max unit off characteristics collector ?emitter breakdown voltage (i c = ?10 ma) v (br)ceo ?25 ? ? v collector ?emitter breakdown voltage (v eb = 0, i c = ?10 a) v (br)ces ?30 ? ? v emitter ?base breakdown voltage (i e = ?1.0 a) v (br)ebo ?5.0 ? ? v collector cutoff current (v cb = ?20 v) (v cb = ?20 v, t j = 150 c) i cbo ? ? ? ? ?100 ?5.0 na a on characteristics dc current gain (i c = ?100 ma, v ce = ?1.0 v) bc808?25 bc808?40 (i c = ?500 ma, v ce = ?1.0 v) h fe 160 250 40 ? ? ? 400 600 ? ? collector ?emitter saturation voltage (i c = ?500 ma, i b = ?50 ma) v ce(sat) ? ? ?0.7 v base ?emitter on voltage (i c = ?500 ma, i b = ?1.0 v) v be(on) ? ? ?1.2 v small?signal characteristics current ?gain ? bandwidth product (i c = ?10 ma, v ce = ?5.0 vdc, f = 100 mhz) f t 100 ? ? mhz output capacitance (v cb = ?10 v, f = 1.0 mhz) c obo ? 10 ?0.7 pf device ordering information device package shipping 2 bc808?25lt1 sot?23 3,000 tape & reel bc808?40lt1 sot?23 3,000 tape & reel 2for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
bc808?25lt1, bc808?40lt1 http://onsemi.com 3 i c , collector current (ma) figure 1. dc current gain h fe , dc current gain 1000 10 -1000 -0.1 -10 -100 100 -1.0 v ce = -1.0 v t a = 25 c i b , base current (ma) figure 2. saturation region i c , collector current (ma) figure 3. aono voltages 100 10 1.0 v r , reverse voltage (volts) figure 4. temperature coefficients +1.0 i c , collector current figure 5. capacitances -0.1 -1.0 -1.0 -10 -100 -1000 -2.0 -1.0 0 v ce , collector-emitter voltage (volts ) v, voltage (volts) v , temperature coefficients (mv/ c) q c, capacitance (pf) -1.0 -0.8 -0.6 -0.4 -0.2 0 -0.01 -0.1 -10 -100 -1.0 -1.0 -0.8 -0.6 -0.4 -0.2 0 -1.0 -10 -1000 -100 -10 -100 t j = 25 c i c = -10 ma i c = -100 ma i c = -300 ma i c = -500 ma t a = 25 c v be(sat) @ i c /i b = 10 v be(on) @ v ce = -1.0 v v ce(sat) @ i c /i b = 10 vc for v ce(sat) vb for v be c ob c ib
bc808?25lt1, bc808?40lt1 http://onsemi.com 4 package dimensions sot?23 (to?236) case 318?09 issue ah *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* mm inches scale 10:1 0.8 0.031 0.9 0.035 0.95 0.037 0.95 0.037 2.0 0.079 style 6: pin 1. base 2. emitter 3. collector dim a min max min max millimeters 0.1102 0.1197 2.80 3.04 inches b 0.0472 0.0551 1.20 1.40 c 0.0385 0.0498 0.99 1.26 d 0.0140 0.0200 0.36 0.50 g 0.0670 0.0826 1.70 2.10 h 0.0040 0.0098 0.10 0.25 j 0.0034 0.0070 0.085 0.177 k 0.0180 0.0236 0.45 0.60 l 0.0350 0.0401 0.89 1.02 s 0.0830 0.0984 2.10 2.50 v 0.0177 0.0236 0.45 0.60 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maxiumum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. 318-01, -02, and -06 obsolete, new standard 318-09. 1 3 2 a l bs v g d h c k j on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 bc808?25lt1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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